Annual Symposium on Photomask Technology and Management: Proceedings, Volume 16; Volume 2884SPIE--the International Society for Optical Engineering, 1996 - Integrated circuits |
Contents
Investigation of multiphase printing writing modes on mask performance in MEBES 4500 | 8 |
Mask inspection and realtime linewidth measurements 288415 | 15 |
Detectability and printability of programmed defects in the contact layer for 256MbDRAM | 58 |
Copyright | |
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Common terms and phrases
ablation aerial image alignment alternating PSM baking bias CD linearity CD measurement CD uniformity cell chrome clear defect coating thickness contact hole corner rounding critical dimension defect printability density design rule developed deviation device DRAM dry etching e-beam edge roughness electron beam lithography etch process etch rate Etec Systems evaluation excimer laser fabrication feature film focus hole pattern fidelity hybrid PSM i-line ICP power improved layer linewidth Lucent Technologies manufacturing MEBES method metrology nm thick normal opaque defect optical proximity correction optimal overetch parameters participants pattern edge pellicle performance phase shift phase-shift mask photomask Photronics pinhole pixel plate polysilicon pre-baking process window proximity correction proximity effect repaired area resolution RETICLE DEFECT sample sensitivity shifter shown in Figure shows simulation specification Spot stepper substrate Table target technique temperature tool transmission uC/cm² wafer wavelength wet etching μη