Vertical-cavity Surface-emitting Laser Arrays: 27-28 January 1994, Los Angeles, CaliforniaJack L. Jewell |
Contents
Wide temperature range cw operation of verticalcavity surfaceemitting lasers with | 12 |
Lowthreshold reliable verticalcavity surfaceemitting laser arrays for system applications | 22 |
Highspeed modulation characteristics and smallsignal circuit modeling of deeply implanted | 28 |
Copyright | |
4 other sections not shown
Common terms and phrases
active diameter active layer active region alignment Appl capacitance carrier cavity surface emitting characteristics circuit cm³ coupling cw operation DBR mirror dielectric mirrors distributed Bragg reflectors doping drive current edge-emitting effect electrical RC parasitics emitting lasers etching fabrication fiber Figure frequency function GaAs gain peak heat sources increase injection input interface junction temperature laser array laser current laser diodes Lett light output maximum measured mesa microlens microlens arrays modulation bandwidth modulation response molecular beam epitaxy Nakwaski obtained optical interconnects optoelectronic output power p-type packaging Photonics Phys PLG PLG PLG polarization pulsed operation Quantum Electron resonance S-SEED semiconductor lasers series resistance single-mode spatial hole burning SPIE spontaneous emission structure substrate Technology thermal conductivity thermal resistance thickness threshold voltage transverse mode tuning current VCSEL array Vertical Cavity Surface vertical-cavity laser diodes vertical-cavity surface-emitting lasers wafer wall-plug efficiency Wang