Physics of Semiconductor DevicesWiley Eastern, 1989 - Semiconductors |
Contents
Mobility of 2D Electron Gas at Low Concentrations | 3 |
Intelligent Sensors on GaAs for High Temperature Applications | 9 |
Physics of Superconducting Transistors | 19 |
Copyright | |
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A N Chandorkar a-Si activation energy alloy amorphous silicon annealing APCVD Appl atomic band band gap behaviour boron breakdown voltage capacitance capacitors carrier charge conductivity constant defect Delhi density deposited dielectric dopant doped dose electrical energy loss rates etching evaporation experimental fabricated Fermi level frequency function GaAs gate grain boundary heating hole traps hydrogen I-V characteristics IEEE implantation increase INDIA Integrated Circuits interface iodine irradiated Josephson layer Lett light soaked LPCVD material metal mobility National Physical Laboratory nitridation observed obtained Ohmic parameter peak phonon photoconductivity photocurrent photon Phys Physics Pilani plasma polysilicon properties PVDF radiation recombination resistance samples scattering Semiconductor Devices shows silane silicides silicon dioxide silicon films Singh SiO2 solar cells Solid substrate superconducting surface technique Technology temperature dependence thermal thermoelectric power thin films threshold voltage transistor undoped vacuum values variation W S Khokle wafers