G. E. Transistor Manual |
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Contents
BASIC SEMICONDUCTOR THEORY | 1 |
SMALL SIGNAL CHARACTERISTICS | 43 |
BlackBox Analysis of the Four Terminal Linear Network | 49 |
Copyright | |
25 other sections not shown
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Common terms and phrases
amplitude anode applied approximately atoms audio base current base-two bias breakdown voltage capacitance capacitor carriers cathode characteristics charge circuit design CIRCUIT Figure circuit of Figure CM CM collector current collector voltage common emitter conduction configuration constant crystal current gain curve cycle device effect Electric electron emitter current emitter voltage equation equivalent circuit feedback flip-flop forward biased forward current gate germanium increase input impedance interbase junction temperature leakage current load maximum measurement meter multivibrator negative negative resistance noise NPN transistor ohms open-circuited operating oscillator output impedance parameters peak point PNPN power dissipation power gain pulse ratio region relaxation oscillator resistance resistor reverse biased saturation semiconductor shown in Figure signal specified stability supply voltage switch thermal trigger Tunnel Diode unijunction transistor variation volts watts waveform zero
Bibliographic information
| Title | G. E. Transistor Manual |
| Author | General Electric Company. Semiconductor Products Dept |
| Edition | 7 |
| Published | 1969 |
| Original from | Pennsylvania State University |
| Digitized | Aug 25, 2009 |
| Length | 596 pages |
| Export Citation | BiBTeX EndNote RefMan |