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30 minute anneal activation efficiency anneal conditions annealed at 900 annealing temperature arsenic Band diagram bulk CAP condition conduction band contact resistivity contact structure contamination Cr-doped semi-insulating GaAs Debye length deposited device diffusion dopant doping effects electrical activation electrical properties electron concentration electron mobility energy epitaxial equilibrium evaporation rate EWF model excess As pressure expected experimental Fermi energy Fermi level Figure fixture function GaAs annealed GaAs surface GaInAs gallium heterojunction implant dose implanted GaAs InAs integrated circuit interface phases ion implantation J.M. Woodall L.F. Eastman lattice layer Lett MESFET Mn accumulation Mn surface accumulation n-type n-type dopant n-type GaAs nanometers NPCArAs NPCHAs observed ohmic contact outdiffusion oxide p-type surfaces PCHAs condition Phys PL spectra proximate contact quartz sample holder Schottky barrier height semiconductor shallow acceptor shallow donor shown in Fig SiF implanted silicon SIMS profile species substrate undoped valence band