Wear of single-crystal silicon carbide in contact with various metals in vacuum
Kazuhisa Miyoshi, Donald H. Buckley, United States. National Aeronautics and Space Administration. Scientific and Technical Information Office
National Aeronautics and Space Administration, Scientific and Technical Information Office, 1978 - Science - 22 pages
2 pages matching basal plane in this book
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Aeronautics and Space affinity for silicon aluminum and titanium basal plane boundary of rhodium brittle fracture carbide and produces Carbide in Contact carbide wear debris CONTACT WITH VARIOUS copper rider cracking and fracturing debris during sliding debris of silicon Donald H experiments were conducted fracture during sliding Fracturing and cracking grain boundary greater shear moduli grooves and indentations hexagon-shaped Kanazawa University Lewis Research Center metal riders Miyoshi mm/min NASA National Aeronautics passes on SiC percent pure primarily due produced by brittle produced during sliding rhodium and tungsten rhodium rider rider produced rolling of silicon Scanning electron micrograph silicon and carbon silicon carbide 0001 silicon carbide surface silicon carbide wear single-crystal silicon carbide slides or rolls sliding contact sliding direction sliding direction,<1010 sliding velocity Space Administration stronger chemical affinity temperature titanium rider Tungsten rider vacuum pressure various metals wear behavior WEAR OF SINGLE-CRYSTAL wear scars wear track X-ray map