Power Semiconductor Materials and Devices: Volume 483
S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, S. Tenconi
Cambridge University Press, 1997 - Technology & Engineering - 456 pages
IInnovative silicon concepts and nonsilicon materials such as SiC, diamond and group-III nitrides are finding interest for new generations of electronic devices operational at much higher voltages and temperatures than conventional lower-power transistors and integrated circuits. Improved bulk and epitaxial growth, processing, device design and circuit architecture, bonding, testing and packaging are all necessary for realization of new applications. It seems clear that Si will continue to dominate most power electronics applications for the next decade, while SiC is by far the most mature of the newer materials technologies. The group-III nitrides are also extremely attractive because of their excellent transport properties and the availability of heterostructures. It is likely that hybrid GaN/SiC devices will have a role due to the need for high thermal conductivity substrates for thermal management. Diamond appears to be trailing because of the inability to dope with donor impurities, although in principle, its properties are probably better suited to high-temperature applications than many other materials.
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Applications of HighPower Electronic Switches in
GaN and Related Materials for HighPower Applications
Comparative Overview of UMOS
46 other sections not shown
annealing Appl applications atoms band beam bias bonding breakdown breakdown voltage calculated carbon carrier characteristics compared concentration conduction crystal defects demonstrated density dependence deposited depth developed devices diamond diffusion diode dislocations distribution doping effect electric electron energy epitaxial etch rates experimental experiments fabricated field Figure films formed frequency GaAs gate grown growth heat higher IGBT implantation increase indicates intensity interface junction layer Lett lifetime limited lower material measured metal method observed obtained operation oxide oxygen p-type parameters peak performed Phys plasma potential power devices present pressure produce properties reduced region reported resistance respectively ring room temperature samples semiconductor shown shows silicon simulation step structure substrate surface switching technique temperature thermal thickness typical values voltage wafer