Functional Photonic Integrated Circuits: 9-10 February 1995, San Jose, CaliforniaMario N. Armenise, Ka-Kha Wong |
Contents
Deep surface grating DFB and DBR quantum well diode lasers in AlGaAsGaAs for photonic | 10 |
Cellular automaton approach to semiconductor laser behavior and applications 240103 | 22 |
Millimeterwave characteristics of GaAsGalnAs heterojunction in MITATT mode considering | 34 |
Copyright | |
17 other sections not shown
Common terms and phrases
absorption acid amplifier annealing Appl bandgap bandwidth beam Bragg calculated channel waveguide circuit coefficient coupler coupling crystal CTCRR D-fiber devices DFB lasers diffraction diffusion diode disordering doped effective efficiency Electron emission erbium etching extended cavity fabrication fiber frequency GaAs GaAs/AlGaAs gain glass grating IFVD IMPATT increase index change index profiles input impedance integrated optical intermixing ion exchange J.H. Marsh lasing lattice layer Lett lithium niobate lithium tantalate mask material measured melt MITATT mode modulators multiplication factor negative resistance obtained optical fiber optical waveguides optimised output parameters passive peak phase photodiode photons Phys propagation loss proton exchange pump power quantum refractive index region resonator ridge waveguide sample shown in Fig signal silica SiO2 slope efficiency solid solutions SPIE splice loss SrF2 structure substrate surface technique temperature threshold current transimpedance transimpedance amplifier values voltage wavelength width Z-cut