Fabrication and DC performance of self-aligned GaAs gate SISFET |
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Contents
SELF ALIGNED T GATE TECHNOLOGY | 21 |
FABRICATION PROCEDURES | 31 |
SISFET DC PERFORMANCE AND APPLICATIONS | 94 |
Copyright | |
Common terms and phrases
2.5 ym gate 2DEG 300K l-V characteristics 5Ga 5As AlGaAs AlxGa1xAs amount of undercut angled implant barrier layer bias voltage blow dry capacitance conduction band decrease density depletion device performance device structure diffusion Dl water doping drain current drain regions effects electron mobility etch rate extrinsic transconductance Field Effect Transistor Figure fl.mm flow rate GaAs gate gas pressure gate contact gate layer gate length devices gate length SISFETs gate voltage gate width SISFETs heterojunction heterostructure higher insulator interface layer structure lithography lower mA/mm mask mS/mm N2 blow dry non-angled implant obtained ohmic contacts photoresist Phys rapid thermal annealing sample sheet resistivity showed shown in Fig Si+ implantation SISFET in Fig SISFET processing source and drain source resistance substrate surface thickness threshold voltage transconductance transfer characteristics undoped Al 5Ga undoped gap region wafer ym gate length ym gate width
Bibliographic information
| Title | Fabrication and DC performance of self-aligned GaAs gate SISFET |
| Author | Mary Yun-chun Chen |
| Publisher | Cornell University, Jan., 1988 |
| Original from | Cornell University |
| Digitized | Dec 6, 2010 |
| Length | 466 pages |
| Subjects | › › Field-effect transistors Gallium arsenide semiconductors Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Electronics / Transistors |
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