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absorption length active layer active region AlGaAs algorithm Appl ASWRIT+ASSAMF,FNAME,32,2 average hole velocity band-to-band recombination best fit bias voltage bimolecular calculation CALL CLOSSAU CALL OPNPSACTYPE CALL TNOU('INPUT capacitance capacitor carrier distribution carrier population carrier transport Chapter conduction band continuity equation curve described device of Fig doping density dye laser electrons and holes electrostatic potential energy evaporation experimental field screening Figure GaAs GaAs epilayer GaAs samples GALLIUM ARSENIDE high fields hole sweepout inductor input laser Ithaca laser power Lehmen Lett lightly doped sample luminescence decay luminescence signal Mask Level micron nonlinearity nonradiative decay Np(t number of carriers ohmic contact optical technique perturbation phonon photoconductor photoexcitation level photoexcited carrier density photoresist Phys picosecond plot Poisson's equation power law probe created carriers pulsewidth limited pump-probe radiative rate equation resolved luminescence measurements resolved measurements Schottky diode semiconductor Shorinji Kempo shown in Fig shows simple surface recombination thesis time-resolved voltage drop wavelength