1983 IEEE MTT-S International Microwave Symposium Digest: May 31-June 3, Sheraton Boston Hotel, Boston, Massachusetts

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IEEE, 1983 - Microwave devices - 599 pages

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Contents

Table of Contents
2
F6 A FERRIMAGNETIC RESONANCE SENSOR FOR REMOTE
3
MTTS Administrative Committee
11
Copyright

81 other sections not shown

Common terms and phrases

analysis antenna applications band bandwidth bias biasing broadband capacitance capacitors cavity channel characteristics configuration coplanar coupler coupling Department of Electrical device dielectric resonator dielectric waveguide drain Electrical Engineering Electronics elements equation equivalent circuit experimental fabricated feedback amplifier FET Amplifier filter FREQUENCY GHz function GaAs GaAs FET gain gate length gate width hyperthermia IEEE IEEE Trans IMPATT diode impedance inductor input and output insertion loss integrated circuits Ka-band Laboratory layer load LOSS dB low-noise matching networks matrix measured MESFET micron microstrip microstrip line Millimeter Wave millimeter-wave mixer MMIC mode modulation MTT-S multiplexer noise figure obtained ohms oscillator output power output VSWR parameters performance phase shifter PIN diodes port propagation pulse Raytheon Company resistor return loss S-parameters shown in Fig signal stage structure substrate technique Technology temperature thickness tion transistor transmission line tuning values voltage VSWR wavelength

Bibliographic information

Title1983 IEEE MTT-S International Microwave Symposium Digest: May 31-June 3, Sheraton Boston Hotel, Boston, Massachusetts
ContributorsInstitute of Electrical and Electronics Engineers, IEEE Microwave Theory and Techniques Society
PublisherIEEE, 1983
Original fromthe University of California
DigitizedApr 11, 2011
Length599 pages
  
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