10th Annual Symposium on Microlithography: Proceedings : September 26-27, 1990, Sunnyvale Hilton, Sunnyvale, CaliforniaSPIE--the International Society for Optical Engineering, 1991 - Technology & Engineering - 315 pages |
Contents
PHASESHIFT MASKS | 19 |
EBEAMLASER LITHOGRAPHY | 89 |
METROLOGY | 197 |
Copyright | |
2 other sections not shown
Common terms and phrases
accuracy addition alignment allows application areas auxiliary average beam chrome clear coherence contrast correction critical dark defect determined deviation device dimension distance dose E-beam edge effects electric field electron error Etch exposure field Figure focus formed function gratings improvement increase industry inspection intensity isolated laser light limited lines lines and spaces linewidth lithography machine manufacturing means measurement MEBES method micron Nikon Normalized operation optical overlay parameters particle pattern performance phase phase-shifter phase-shifter lines phase-shifting mask photomask placement plate position precision presented problems production projected proximity range reduced registration repair repeatability resist resolution reticle scan shifting shown shows sigma simulation sizing sleeve spaces specifications stage step Strip Table technique tool variable wafer width writing X-ray