Microcrystalline and Nanocrystalline Semiconductors: Volume 358The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. |
Contents
THEORY OF THE PHYSICAL PROPERTIES OF Si NANOCRYSTALS | 13 |
CALCULATION OF THE ELECTRONIC STRUCTURE OF SILICON | 25 |
ELECTRONIC PROPERTIES OF POROUS SILICON | 31 |
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Common terms and phrases
absorption amorphous silicon annealing anodization Appl atoms band gap blue bulk c-Si calculated carriers Chem chemical clusters crystal crystallites current density dangling bonds decay decrease defects dependence deposition devices diameter dielectric dielectric function diffraction doped effect efficiency electrical electrochemical electroluminescence electron emitting energy etching excitation exciton experimental Figure function growth hydrogen implanted increase infrared Intensity arb interface L. T. Canham laser lattice LEPSI Lett light emission luminescence material measurements microcrystalline n-type nanoclusters nanocrystallites nanocrystals nucleation observed obtained optical properties oxide particles PECVD phonon photoluminescence Phys PL intensity PL peak PL spectra plasma poly-Si polycrystalline pores porosity porous silicon prepared Proc pulse quantum confinement quantum dots quenching radiative Raman scattering ratio recombination region room temperature samples semiconductor shift shown in Fig shows SiO2 solid spectroscopy spectrum structure substrate surface technique thermal thickness thin films transition trapping visible voltage wafers wavelength X-ray