Study of Noise in Transistors at Microwave Frequencies Up to 4 GHzUniversity of Minnesota., 1969 - Transistors |
Contents
Factors Affecting the Small Signal Parameters | 26 |
1 | 34 |
Experimental Set up and Measurements | 37 |
Copyright | |
5 other sections not shown
Common terms and phrases
4KTR 50 ohms alpha and beta alpha cut Appendix bandwidth base resistance calculated capacitors catagory Chapter coaxial switches collector connected cut off frequency device device under test diffusion capacitance drift field emitter current equation equivalent circuit excess noise experimental set feedback capacitance G₁ G₂ grounded emitter high frequency high injection high level injection holes of group I.F. amplifier image frequency input and output input capacitance input impedance intermediate frequency invariants local oscillator low frequency alpha measurements microwave frequencies microwave transistor minimum noise figure mixer neutralization noise behaviour noise figure meter noise measurements noise power noise source obtained oscillator output parasitics output terminals P-N-P TRANSISTOR P₁ phase angle power gain power meter preamplifier R₂ reactance S-parameters shown in figure signal frequency signal level simplifies small signal parameters source impedance transistor jig tuning stubs valid voltage VOLTS