Interfaces, Superlattices, and Thin Films: Symposium Held December 1-6, 1986, Boston, Massachusetts, USAJohn D. Dow, Ivan K. Schuller |
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Page 67
... bond probabilities is a non - linear mean bond length d as a function of composition x . That is , Vegard's Law , d ' ( 1 ยท x ) dGa - Sb + x dGe - Ge ( 13 ) is violated even on the average for this class of alloys . We assume that the bond ...
... bond probabilities is a non - linear mean bond length d as a function of composition x . That is , Vegard's Law , d ' ( 1 ยท x ) dGa - Sb + x dGe - Ge ( 13 ) is violated even on the average for this class of alloys . We assume that the bond ...
Page 69
... bonds in ( GaSb ) . Ge The theory 1 - x 2x allows the calculation of both oriented - pair probabilities and bond probabil- ities between pairs of atoms . It also predicts a novel violation of Vegard's Law for the behavior of the mean bond ...
... bonds in ( GaSb ) . Ge The theory 1 - x 2x allows the calculation of both oriented - pair probabilities and bond probabil- ities between pairs of atoms . It also predicts a novel violation of Vegard's Law for the behavior of the mean bond ...
Page 207
... bond length during the relaxation . New bonds that form are shown shaded . All the atoms have four near neighbors after reconstruction and the relaxed structure contains two 4 - membered rings per unit cell . If the pairs of near ...
... bond length during the relaxation . New bonds that form are shown shaded . All the atoms have four near neighbors after reconstruction and the relaxed structure contains two 4 - membered rings per unit cell . If the pairs of near ...
Contents
ACKNOWLEDGMENTS xxiii | 8 |
APPLICATION OF SCANNING TUNNELING MICROSCOPY TO | 13 |
ELASTIC PROPERTIES OF SUPERLATTICES | 23 |
Copyright | |
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1987 Materials Research absorption activation energy AlGaAs alloy amorphous annealing Appl atoms band band gap barrier beam bond bulk calculated coefficient composition concentration crystal crystalline decrease defects density dependence diffusion dislocations dopant doped effect electron energy epitaxial etching evaporation EXAFS exciton experimental Figure function GaAs grown growth hydrogen implanted increase indicated intensity interdiffusion interface laser lattice layer thickness Lett magnetic Materials Research Society measurements metal microscopy MnSe modulation molecular beam epitaxy monolayer multilayers n-type observed obtained optical orientation overlayer oxide parameters peak phase phonon photoluminescence Phys plane Proc properties Raman ratio reaction region room temperature sample Schottky semiconductor shown in Fig shows silicide silicon solid spectra spectroscopy sputtering stoichiometry structure substrate substrate temperature superlattice surface Symp technique thermal thin films Torr valence band wavelength x-ray diffraction