Interfaces, Superlattices, and Thin Films: Symposium Held December 1-6, 1986, Boston, Massachusetts, USAJohn D. Dow, Ivan K. Schuller |
Contents
APPLICATION OF SCANNING TUNNELING MICROSCOPY TO | 13 |
ELASTIC PROPERTIES OF SUPERLATTICES | 23 |
PHOTO EFFECTS IN DOPING MODULATED AMORPHOUS 29 | 29 |
Copyright | |
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1987 Materials Research absorption activation energy AlGaAs alloy amorphous annealing Appl atoms band band gap barrier beam bond bulk calculated coefficient composition concentration crystal crystalline decrease defects density dependence diffusion dislocations dopant doped effect electron energy epitaxial etching evaporation EXAFS exciton experimental Figure function GaAs grown growth hydrogen implanted increase indicated intensity interdiffusion interface laser lattice layer thickness Lett magnetic Materials Research Society measurements metal microscopy MnSe modulation molecular beam epitaxy monolayer multilayers n-type observed obtained optical orientation overlayer oxide parameters peak phase phonon photoluminescence Phys plane Proc properties Raman ratio reaction region room temperature sample Schottky semiconductor shown in Fig shows silicide silicon solid spectra spectroscopy sputtering stoichiometry structure substrate substrate temperature superlattice surface Symp technique thermal thin films Torr valence band wavelength x-ray diffraction