Interfaces, Superlattices, and Thin Films: Symposium Held December 1-6, 1986, Boston, Massachusetts, USAJohn D. Dow, Ivan K. Schuller |
Contents
APPLICATION OF SCANNING TUNNELING MICROSCOPY TO | 13 |
ELASTIC PROPERTIES OF SUPERLATTICES | 23 |
PHOTO EFFECTS IN DOPING MODULATED AMORPHOUS 29 | 29 |
Copyright | |
26 other sections not shown
Other editions - View all
Common terms and phrases
absorption alloy amorphous annealing Appl atoms band barrier beam bond bulk calculated changes compared composition concentration conduction consistent constant crystal decrease defects density dependence deposition determined diffraction diffusion direction DISCUSSION doped effect electron energy epitaxial experimental field Figure formation function GaAs grain grain boundaries grown growth heating higher hydrogen implanted increase indicated intensity interface lattice layer Lett magnetic Materials measurements metal modulation multilayers observed obtained occurs optical orientation pattern peak period phase Phys plane position prepared present pressure Proc properties range ratio reaction REFERENCES reflection region relative reported Research resistivity respectively sample scattering semiconductor shown shown in Fig shows silicon similar solid spectra sputtering strain structure substrate superlattice surface technique temperature thermal thickness thin films transition x-ray