Physics of Semiconductor Devices
This completely reorganized edition of the classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. Integrates nearly 1,000 references to important original research papers and review articles, more than 650 high-quality technical illustrations, and 25 tables of material parameters for device analysis.
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avalanche breakdown bandgap barrier height bias breakdown voltage capacitance cathode channel charge coefficient collector condition conduction band constant current density current-voltage characteristics curve decreases depletion layer depletion region depletion-layer width diffusion distribution doping profile drain current drain voltage effect efficiency electric field Electron Devices emission emitter energy Energy-band diagram epitaxial equation equilibrium Fermi level Field-Effect Transistor Figure frequency GaAs gate voltage heterojunction hole IEEE Trans IMPATT diode implantation impurity increases injection insulator interface traps inversion ionization JFET laser lattice Lett maximum measured metal microwave minority-carrier mobility MOSFET n-type noise obtained ohmic contacts operation optical oscillation output oxide p-n junction parameters photodiode photon Phys potential Proc ratio recombination reduce reverse S. M. Sze Schottky barrier Schottky diode semiconductor shown in Fig shows silicon solar cell Solid State Electron space-charge structure substrate surface temperature thermal thickness threshold voltage thyristor tunnel diode valence band versus wavelength