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Infrared tomography for detection of lattice defects in III V compound
Observation of microdefects in GaAs crystals by infrared light scattering
Infrared scattered light and processed images of defects in GaAs wafers
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absorption coefficient active layer annealing Appl band Brozel carrier concentration cathodoluminescence characterization correlation Crystal Growth D.J. Stirland deep level defects device diameter diode dislocation density dislocation distribution dislocation free EL2 concentration electrical electron Elsevier Science Publishers epitaxial etch pits experimental FET performances Figure GaAs crystals GaAs wafers grown homogeneity image processing impurities infrared infrared light scattering ingot inhomogeneities integrated circuits interface ion implanted Kah-nee-ta laser beam LEC crystals LEC GaAs Lett light scattering tomography luminescence M.R. Brozel mapping measurements MESFET method microscope Nantwich non-uniformities observed obtained optical p-n junction parameters photoconductive photocurrent photoetching photoluminescence photoquenching Phys plane region resistivity sample scanning Science Publishers B.V. semi-insulating GaAs semiconductor Shiva shown in Fig shows slices solar cell spatial Stirland striations structure substrate surface technique temperature thermal thick threshold voltage topograph transmission image typical undoped uniformity variations wavelength X-ray topography zone