GaN and Related Alloys: Symposium Held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

Front Cover
S. J. Pearton
Materials Research Society, 1999 - Electroluminescent devices

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InGaNGaNAIGANBased LEDs and Laser Diodes G1 1 1
Material Properties of Gan in the context of Electron Devices G1 2 1

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