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InGaNGaNAIGANBased LEDs and Laser Diodes G1 1 1
Material Properties of Gan in the context of Electron Devices G1 2 1
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active alloy annealing Appl atoms band buffer layer calculated carrier compared concentration crystal curve defects density dependence deposition determined devices direction dislocations doping effect electric electron emission energy epitaxial etching excitation experimental field Figure formed function GaN films GaN layer grown growth growth rate higher implanted increase indicates InGaN intensity interface laser lateral lattice layer Lett lower material measurements mode MOVPE Nitride nitrogen observed obtained optical parameters pattern peak performed phase Phys polarization potential present pressure Proc properties quantum range ratio region reported Research respectively samples sapphire semiconductors shift shown in Fig shows similar spectra strain stripes structure substrate surface Symp temperature thermal thickness