Analysis and Design of Analog Integrated CircuitsThis edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an integral part of many examples in the problem sets as a more accurate check on hand calculations and as a tool to examine complex circuit behavior beyond the scope of hand analysis. Concerned largely with the design of integrated circuits, a considerable amount of material is also included on applications. |
Contents
BIPOLAR MOS AND BICMOS INTEGRATEDCIRCUIT | 89 |
SINGLETRANSISTOR AND TWOTRANSISTOR | 193 |
TRANSISTOR CURRENT SOURCES AND ACTIVE LOADS | 269 |
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analog circuits analysis applied approximately Assume base current base-emitter basic amplifier bias current biased BiCMOS bipolar transistor breakdown voltage C₁ calculated capacitance capacitor cascode channel Chapter circuit of Fig collector current collector-base common-base common-emitter common-mode configuration current gain current source depletion region device differential diffusion diode doping drain effect emitter follower emitter-coupled pair Equation feedback network Figure forward-active region frequency response gate implant impurity input offset voltage input resistance input voltage integrated circuits integrated-circuit JFET junction layer M₁ magnitude mismatch MOSFET npn transistor operational amplifier output current output resistance output stage output voltage oxide p-channel p-type parameters pinch-off polysilicon power dissipation Q₁ Q₂ R₁ R₂ resistor saturation sheet resistance shown in Fig signal silicon small-signal equivalent circuit substrate temperature threshold voltage transconductance transfer characteristic typical V₁ VBE(on voltage gain wafer zero ΚΩ