Process and device modeling for microelectronics
The 11 invited papers in this volume, written by experts in the field, report on current trends and significant research findings in the modeling and simulation of semiconductor devices and processes, monitoring the rapid scientific growth that has occurred in this area. The project "Materials and Devices for Solid-State Electronics" (MADESS), funded by Italy's National Research Council, started in 1987 and lasted 5 years. The project addressed five main research areas: VLSI Technology and Device Physics; Microwave and Optoelectronic Devices; Sensors; Semiconductor Power Devices; and Reliability and Diagnostics. Encompassing a large spectrum of activities ranging from material science to system architecture, research units included universities, public research laboratories and industry. The amount of resources made available by the project to the scientific community in the above areas has turned out to be a major impetus for growth in this scientific field. In addition, it has enhanced various forms of cooperation between research and industry, contributing to the development of a new consciousness concerning the role of microelectronics in modern society. The contributions in this volume are of worldwide interest, and will help to stimulate future research and analysis in this field.
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algorithm analysis analytical approximation avalanche avalanche breakdown Baccarani bandgap base current bias bipolar transistors Brillouin zone calculated carrier cell channel charge circuit collector collisions components computed concentration conduction band constant corresponding current density Device Modeling device simulator distribution function doping drain drift velocity drift-diffusion e-beam EEPROM effects electric field Electron Devices electron energy equation evaluation experimental data expression factor Figure flash-EEPROM floating gate gate oxide hole hydrodynamic hydrodynamic model IBM device IEEE IEEE Trans impact ionization impact-ionization implantation increase injection integration interaction interface layer mask measured method Monte Carlo MOS transistor MOSFET multiplication coefficient non-volatile memory obtained optical parameters particles phonon Phys physical Poisson's equation polysilicon potential problem profiles range recombination scattering rate scheme semiconductor devices shown in Fig silicon solution structure substrate current technique term thickness threshold voltage transport tunnel values vector velocity X-ray