1989 Spring meeting: final program and abstracts, Materials Research Society 1989 spring meeting, April 24-29 Town & Country Hotel, San Diego, California |
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Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
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Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications AT&T Bell Laboratories atomic behavior boron bulk carbon carrier ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds concentration crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown growth heteroepitaxial high temperature hydrogen in-situ increase interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory observed obtained optical oxide oxygen parameters particles peak phase plasma polyimide polymer powder properties rapid thermal annealing reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal spectra spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films University wafer X-ray diffraction