Process and device modeling
This book is the first of a new, seven volume series which aims to provide a comprehensive description of basic methods and technologies related to CAD for VLSI. The series includes up-to-date results and latest developments, with a good balance between theoretical and practical aspects of VLSI design. In this volume emphasis is placed on the basics of modeling, the opening chapters being devoted to fundamental process and device modeling. The following chapters cover different aspects of device modeling and also bridge to process simulation on the one side, and circuit simulation on the other. A systems approach to physical modeling, spanning the whole range of topics covered, is also dealt with. Recent conferences on the subject have signalled that physical modeling combined with technology, device and circuit optimization, will undoubtedly become a major trend in the future.
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Ion Implantation Models for Process Simulation
Simulation of Lithography
Physical Models for Numerical Device Simulation
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algorithm Analysis applied approximation base bias boundary conditions calculated capacitances carrier densities channel charge circuit simulation coefficient continuity equations current density dependent depletion Device Modeling device simulation device structures diffusion dimensional discretization distribution doping drain current drift velocity effects electric field electron and hole Electron Devices electrostatic potential energy Engl expression factor Figure function GaAs grid IEEE IEEE Trans impact ionization impurity concentration Integrated Circuits interface interpolation ion implantation iteration layer linear lithography mask matrix MEDUSA method mobility Monte Carlo simulation MOSFET nonlinear Numerical Analysis numerical models obtained one-dimensional optical oxide p-n Junctions phonon Phys physical Poisson's equation problem Proc Process and Device process simulation range recombination region resist saturation Selberherr Semiconductor Devices semiconductor equations shown in Fig silicon Solid-State Electron solution solved step substrate surface technique temperature three-dimensional threshold voltage transport two-dimensional valence band values VLSI