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amount analysis angle anneal Appl applied atoms bonds breakdown calculated centers characterization charge chemical compared concentration constant decreases defects dependence deposited depth determined devices dielectric diffusion effect electric field Electrochem electron energy etch experimental exposure fabrication field Figure films flow fluence formed function furnace gate gate dielectric gate oxide grown growth height higher IEEE implantation improved incorporation increase indicate injection interface layer leakage current Lett levels lower materials measured methods nitride nitrogen observed obtained organic contaminants oxide thickness oxygen oxynitride pattern peak performed Phys plasma position present properties reliability respectively samples shown in Fig shows Si-SiO2 interface silicon SIMS SiO2 SiON stress structure substrate surface technique temperature thermal thickness thin trap density tunnel values voltage wafers waveguide zone
Page 132 - Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan ABSTRACT We have developed a novel architecture to process 2-dimensional digital image data with very high speed.
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Page 96 - This work was supported in part by the NSF Engineering Research Centers Program through the Center for Advanced Electronic Materials Processing (Grant CDR 8721505) and the Semiconductor Research Corporation (SRC Contract 132).
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