Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of the ... International Symposium

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Electrochemical Society., 1999 - Silicon dioxide
 

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Page 132 - Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan ABSTRACT We have developed a novel architecture to process 2-dimensional digital image data with very high speed.
Page 236 - This author was supported in part by the Office of Naval Research and the Defense Advanced Research Projects Agency (under...
Page 47 - ... Cell Radiation Handbook, JPL Publication 77-56, Contract No. NAS7-100 (1977) . 4. I. Weinberg and CK Swartz, Appl. Phys. Lett. 36(8), p. 693 (1980) . 5. JR Davis, A. Rohatgi, RH Hopkins, PD Blais, P. Rai-Choudhury, JR McCormick and HC Mollenkopf, IEEE Trans, on Electron Devices, ED-27(4) (1980). 6. A. Rohatgi, JR Davis, RH Hopkins, P. Rai-Choudhury, PG McMullin and JR McCormick, J. Sol. St. Elec. 23(5), p. 415 (1980). 7. PM Mooney, LJ Cheng, M. Suli , JD Gerson and JW Corbett, Phys. Rev., B15,...
Page 125 - CE Blat, EH Nicollian, and EH Poindexter, J. Appl. Phys. 69, 1712 (1991).
Page 96 - This work was supported in part by the NSF Engineering Research Centers Program through the Center for Advanced Electronic Materials Processing (Grant CDR 8721505) and the Semiconductor Research Corporation (SRC Contract 132).
Page 190 - Y. Okada, PJ Tobin, V. Lakhotia, WA Feil, SA Ajuria, and RI Hegde, "Relationship between growth conditions, nitrogen profile, and charge to breakdown! of gate oxynitrides grown from pure N2O", Appl.
Page 73 - Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada Kl A...
Page 97 - EH Nicollian and JR Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York, 1982, p.
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Page 167 - R. Germann, HWM Salemink, R. Beyeler, GL Bona, F. Horst, I. Massarek and BJ Offrein, Journal of the Electrochemical Society, 147, 2237 (2000).

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