What people are saying - Write a review
We haven't found any reviews in the usual places.
Other editions - View all
amount analysis angle anneal Appl applied atoms bonds breakdown calculated centers characterization charge chemical compared concentration constant decreases defects dependence deposited depth determined devices dielectric diffusion effect electric field Electrochem electron energy etch experimental exposure fabrication field Figure films flow fluence formed function furnace gate gate dielectric gate oxide grown growth height higher IEEE implantation improved incorporation increase indicate injection interface layer leakage current Lett levels lower materials measured methods nitride nitrogen observed obtained organic contaminants oxygen oxynitride pattern peak performed Phys plasma position present properties relative reliability respectively samples shown in Fig shows Si-SiO2 interface silicon SIMS SiO2 SiON stress structure substrate surface technique temperature thermal thickness thin trap density tunnel values voltage wafers waveguide zone
Page 132 - Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan ABSTRACT We have developed a novel architecture to process 2-dimensional digital image data with very high speed.
Page 47 - ... Cell Radiation Handbook, JPL Publication 77-56, Contract No. NAS7-100 (1977) . 4. I. Weinberg and CK Swartz, Appl. Phys. Lett. 36(8), p. 693 (1980) . 5. JR Davis, A. Rohatgi, RH Hopkins, PD Blais, P. Rai-Choudhury, JR McCormick and HC Mollenkopf, IEEE Trans, on Electron Devices, ED-27(4) (1980). 6. A. Rohatgi, JR Davis, RH Hopkins, P. Rai-Choudhury, PG McMullin and JR McCormick, J. Sol. St. Elec. 23(5), p. 415 (1980). 7. PM Mooney, LJ Cheng, M. Suli , JD Gerson and JW Corbett, Phys. Rev., B15,...
Page 125 - CE Blat, EH Nicollian, and EH Poindexter, J. Appl. Phys. 69, 1712 (1991).
Page 96 - This work was supported in part by the NSF Engineering Research Centers Program through the Center for Advanced Electronic Materials Processing (Grant CDR 8721505) and the Semiconductor Research Corporation (SRC Contract 132).
Page 190 - Y. Okada, PJ Tobin, V. Lakhotia, WA Feil, SA Ajuria, and RI Hegde, "Relationship between growth conditions, nitrogen profile, and charge to breakdown! of gate oxynitrides grown from pure N2O", Appl.
Page 73 - Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada Kl A...
Page 97 - EH Nicollian and JR Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York, 1982, p.
Page 189 - W. Ting, GQ Lo, J. Ahn, TY Chu, and DL Kwong, IEEE Electron Device Lett.