Conference Proceedings, Volume 22Microwave Exhibitions and Publishers, 1992 - Microwave devices |
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Page 118
topologies are shown in Figure 8. Both LNCS achieve noise figures of less than 1.8dB over the band 21.4GHz to 22.0GHz , and this could probably be reduced in the future by adopting newly commercialised , lower noise HEMTS for the LNA .
topologies are shown in Figure 8. Both LNCS achieve noise figures of less than 1.8dB over the band 21.4GHz to 22.0GHz , and this could probably be reduced in the future by adopting newly commercialised , lower noise HEMTS for the LNA .
Page 157
Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement P J. Tasker , W ... low noise transistors ( MESFETS and HEMTS ) for Direct Broadcast Satellite Television ( DBS ) where both high ...
Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement P J. Tasker , W ... low noise transistors ( MESFETS and HEMTS ) for Direct Broadcast Satellite Television ( DBS ) where both high ...
Page 565
... low - noise HEMT amplifier has been designed and fabricated for Ku - band receiver applications . The key element for the ultra low noise figure of the amplifier is an AlGaAs / GaAs HEMT with 0.3 μm gate length and a gate width of 120 ...
... low - noise HEMT amplifier has been designed and fabricated for Ku - band receiver applications . The key element for the ultra low noise figure of the amplifier is an AlGaAs / GaAs HEMT with 0.3 μm gate length and a gate width of 120 ...
Contents
SESSION B9 MODELLING AND ANALYSIS OF NONLINEAR DEVICES | 1 |
Power amplifier adaptive linearization using predistortion with polynomial | 49 |
Coupled displaced microstrip lines through a rectangular slot in a common | 206 |
Copyright | |
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active amplifier amplitude antenna applications array attenuation band bandwidth beam bias CAEME cavity channel chip chiral circuit components coupler coupling detector developed device dielectric resonator diode effect electric field electromagnetic electron equation field effect transistor filter Finland frequency range function GaAs HEMT IEEE IEEE Trans impedance input insertion loss layer low noise low noise amplifiers magnetic matching measured MESFET method microstrip microstrip line microwave Microwave Theory mixer mm-wave MMIC mode module monolithic noise figure noise parameters obtained optical oscillator output power performance phase noise phase shift planar plane wave polarization power levels propagation Q factor radiation radio receiver reflection coefficient reflector resistance s-parameters samples satellite Schottky Schottky diode shown in Figure signal simulation slot structure substrate technique Technology temperature transistor transmission line transmitter varactor voltage wafer waveguide Wrocław