Conference Proceedings, Volume 22Microwave Exhibitions and Publishers, 1992 - Microwave devices |
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Page 495
... output power was higher than 7 dBm with efficiencies of about 10 % ( Fig . 8 , Fig.9 ) . The temperature stability of output power and frequency is shown in Fig . 10 and Fig.11 . The stability of the oscillation frequency was better ...
... output power was higher than 7 dBm with efficiencies of about 10 % ( Fig . 8 , Fig.9 ) . The temperature stability of output power and frequency is shown in Fig . 10 and Fig.11 . The stability of the oscillation frequency was better ...
Page 597
... power for a Schottky diode mixer at 1 THz can be obtained by cooling a Schottky varactor frequency multiplier chain . The first reason for the higher output power by cooling is the decreased series resistance of the varactor , which ...
... power for a Schottky diode mixer at 1 THz can be obtained by cooling a Schottky varactor frequency multiplier chain . The first reason for the higher output power by cooling is the decreased series resistance of the varactor , which ...
Page 601
Table 1 : Theoretical output power for multiplier chains at near 1 THz , driven at 160 GHz Input power Multiplier Temperature 20 25 30 mW 2X - > 3X 300 K 52 55 58 μW 77 K 470 500 530 μW 3X - > 2X 300 K 45 53 60 77 K 300 350 470 μW μW ...
Table 1 : Theoretical output power for multiplier chains at near 1 THz , driven at 160 GHz Input power Multiplier Temperature 20 25 30 mW 2X - > 3X 300 K 52 55 58 μW 77 K 470 500 530 μW 3X - > 2X 300 K 45 53 60 77 K 300 350 470 μW μW ...
Contents
SESSION B9 MODELLING AND ANALYSIS OF NONLINEAR DEVICES | 1 |
Power amplifier adaptive linearization using predistortion with polynomial | 49 |
Coupled displaced microstrip lines through a rectangular slot in a common | 206 |
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active amplifier amplitude antenna applications array attenuation band bandwidth beam bias CAEME cavity channel chip chiral circuit components coupler coupling detector developed device dielectric resonator diode effect electric field electromagnetic electron equation field effect transistor filter Finland frequency range function GaAs HEMT IEEE IEEE Trans impedance input insertion loss layer low noise low noise amplifiers magnetic matching measured MESFET method microstrip microstrip line microwave Microwave Theory mixer mm-wave MMIC mode module monolithic noise figure noise parameters obtained optical oscillator output power performance phase noise phase shift planar plane wave polarization power levels propagation Q factor radiation radio receiver reflection coefficient reflector resistance s-parameters samples satellite Schottky Schottky diode shown in Figure signal simulation slot structure substrate technique Technology temperature transistor transmission line transmitter varactor voltage wafer waveguide Wrocław