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MT1 Andresciani V De Leo R De Serio M
iT2 Angelov I M Dang Y N Spasov A
IIT6 Bardyla T I Gerhard N
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amplitude analysis application attenuation bandwidth bias boron Budapest calculated capacitance carrier cavity characteristics coefficient components concentration constant coupler coupling crystals curves decrease delay density dependence determined device dielectric dielectric constant diplexer doping effect electric field electron epitaxial equation equivalent circuit experimental factor ferrimagnetic ferrite figure filter frequency band function GaAs given group delay Gunn diodes harmonic IEEE Trans impedance input linear load loss magnetic field matrix maximum measured method microstrip microwave mixer mode negative resistance noise noise figure nonlinear obtained operating optimum oscillator output power parameters parametric amplifier phase plasma propagation pulse pump range ratio region resistance resonator sample saturation magnetization semiconductor shown in Fig signal solution structure substrate switching technique temperature theoretical Theory tion transistor transmission line TRAPATT varactor voltage VSWR wave waveform waveguide width