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THE PRESENT STATUS AND PROSPECT OF DIGITAL INTEGRATED
CURRENT STATUS AND FUTURE OF Si LSI TECHNOLOGY
THREE DIMENSIONAL ANALYSIS BY FOCUSED ION BEAM
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a-Si amorphous layer analysis angle annealing temperature Appl as-implanted atoms B-SiC films boron carrier concentration Ce02 layer CHANNEL NUMBER crystal crystalline damage density decreased deposition depth profile device diffraction diffusion digital etching dopant doping effect electrical activity electron emission epitaxial etch rate Experimental Fig.l Figure formation formed function GaAs growth high energy Hosei University hydrogen impurity incident increase InGaP intensity interface ion beam analysis Ion Beam Technology ion implantation ion source ions/cm2 irradiation Japan laser lattice leakage current Lett measured method Nucl nuclear observed obtained oxide oxygen p-type peak Phys plasma polycide preamorphized RBS spectra region RHEED room temperature scanning scattering secondary defects sheet resistance shell model shown in Fig shows Si+ implantation silicidation silicidation reaction silicon SIMOX SIMS spectrum sputtering structure substrate substrate temperature surface technique thermal thickness Tokyo transmission electron microscopy vapor quenching VLSI voltage wafer X-ray X-ray diffraction ZnSe