Charge-coupled Devices and Solid State Optical Sensors, Issue 4SPIE, 1994 - Charge coupled devices |
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Page 43
... HDTV image sensors for broadcast cameras [ 16 ] ( consumer HDTV camcorders are not expected to be marketable until at least 1998 ) . HDTV CCDs have a format of 1920 x 1036 , resulting in pixel sizes of approximately 7.3 μm x 7.6 μm for ...
... HDTV image sensors for broadcast cameras [ 16 ] ( consumer HDTV camcorders are not expected to be marketable until at least 1998 ) . HDTV CCDs have a format of 1920 x 1036 , resulting in pixel sizes of approximately 7.3 μm x 7.6 μm for ...
Page 44
... HDTV type of applications since it is subject to random reset noise . Hamamatsu Hamamatsu ( Hamamatsu City , JAPAN ) produces scientific optoelectronic devices . Hamamatsu recently reported the investigation of backside illuminated CCDs ...
... HDTV type of applications since it is subject to random reset noise . Hamamatsu Hamamatsu ( Hamamatsu City , JAPAN ) produces scientific optoelectronic devices . Hamamatsu recently reported the investigation of backside illuminated CCDs ...
Page 49
... HDTV CCD image sensors . These sensors require much higher performance than their TV counterparts . At 2 Mpixels , HDTV sensors rival the typical size of scientific image sensors , yet have readout rates that are typically 1000 times ...
... HDTV CCD image sensors . These sensors require much higher performance than their TV counterparts . At 2 Mpixels , HDTV sensors rival the typical size of scientific image sensors , yet have readout rates that are typically 1000 times ...
Contents
Progress in CMOS active pixel image sensors 217203 | 3 |
Characterization and modeling of CCD devices on highresistivity silicon substrates 217223 | 23 |
Performance of highframerate backilluminated CCD imagers 217208 | 90 |
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A/D converter active pixel sensor amorphous silicon anti-bloom drain applications approximately architecture Backside illuminated barrier camera capacitance capacitors CCD image sensor CDS amplifier channel stop Charge-Coupled Devices chip circuit clock CMOS color image sensor color sensor DALSA dark current depletion region developed digital output dynamic range fabricated fixed pattern noise floating gate frame rate HDTV high frame horizontal IEEE image sensor imaging array input gates integration interline lattice-gate layer measured mode MOSFET neuron MOSFET on-chip operation optical output amplifier p-well performance photodiode photogate photosite phototransistor poly polysilicon potential Proc pulse quantum efficiency radiation read noise readout rate reduced reset resolution response scanning scientific CCD scientific image sensors sensor array serial shift register shown in Figure SPIE Vol storage structure substrate thinning transfer transistor values vertical voltage VOUT wafer wavelength x-ray