Charge-coupled Devices and Solid State Optical Sensors, Issue 4SPIE, 1994 - Charge coupled devices |
Contents
Progress in CMOS active pixel image sensors 217203 | 3 |
Characterization and modeling of CCD devices on highresistivity silicon substrates 217223 | 23 |
Performance of highframerate backilluminated CCD imagers 217208 | 90 |
Copyright | |
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Common terms and phrases
A/D converter active pixel sensor amorphous silicon anti-bloom drain applications approximately architecture Backside illuminated barrier camera capacitance capacitors CCD image sensor CDS amplifier channel stop Charge-Coupled Devices chip circuit clock CMOS color image sensor color sensor DALSA dark current depletion region developed digital output dynamic range fabricated fixed pattern noise floating gate frame rate HDTV high frame horizontal IEEE image sensor imaging array input gates integration interline lattice-gate layer measured mode MOSFET neuron MOSFET on-chip operation optical output amplifier p-well performance photodiode photogate photosite phototransistor poly polysilicon potential Proc pulse quantum efficiency radiation read noise readout rate reduced reset resolution response scanning scientific CCD scientific image sensors sensor array serial shift register shown in Figure SPIE Vol storage structure substrate thinning transfer transistor values vertical voltage VOUT wafer wavelength x-ray