Atomic Layer Growth and Processing:, Volume 222
Y. Aoyagi, P. D. Dapkus, T. F. Kuech
Materials Research Society, Oct 11, 1991 - Technology & Engineering - 359 pages
Featuring 46 papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume focuses on the technologically challenging field of atomic layer growth and processing. The concept of atomic layer based processing is perhaps a primary road to both the degree of control and processing uniformity for both etching and deposition that the future demands of the semiconductor industry require. Research areas covered include: mechanistic studies of atomic layer processes; characterization of atomic layer processes; III-V semiconductor studies; group IV semiconductor studies; II-VI semiconductor studies; high Tc superconductors and other materials.
90 pages matching 1991 Materials Research in this book
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SURFACE CHEMISTRY AND MECHANISM OF ATOMIC LAYER GROWTH
THE SURFACE CHEMISTRY OF GaAs ATOMIC LAYER EPITAXY
THE MECHANISMS AND KINETICS OF SURFACE REACTIONS
39 other sections not shown
1991 Materials Research adsorbed adsorption annealing Appl arsine As-rich AsH3 Atomic Layer Epitaxy bond carbon CdTe chamber chemical choked flow coverage crystal growth crystalline cycle decomposition deposition desorb desorption diffraction digital etching dimers dopant doping electron energy etch rate experimental Figure flow rate flux formation Ga-rich surface GaAs gallium grown growth rate growth temperature hydrogen in-situ increase irradiation kinetics LALE laser lattice constant Lett Materials Research Society measured mechanism methyl radicals Mo films molecular beam epitaxy molecules monolayer observed obtained optical oxide oxide desorption oxygen peak phase Phys pressure Proc pulse reactor RHEED RHEED intensity RHEED pattern sample saturation self-limiting semiconductor shown in Fig shows silicon species spectra spectroscopy sticking coefficient structure studies substrate substrate temperature superlattice surface reactions susceptor Symp technique TEGa thermal thickness thin films TMGa TMGa exposure Torr trimethylgallium vapor wafer X-ray ZnSe