Atomic Layer Growth and Processing: Volume 222T. F. Kuech, P. D. Dapkus, Y. Aoyagi Featuring 46 papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume focuses on the technologically challenging field of atomic layer growth and processing. The concept of atomic layer based processing is perhaps a primary road to both the degree of control and processing uniformity for both etching and deposition that the future demands of the semiconductor industry require. Research areas covered include: mechanistic studies of atomic layer processes; characterization of atomic layer processes; III-V semiconductor studies; group IV semiconductor studies; II-VI semiconductor studies; high Tc superconductors and other materials. |
Contents
SURFACE CHEMISTRY AND MECHANISM OF ATOMIC LAYER GROWTH | 3 |
THE SURFACE CHEMISTRY OF GaAs ATOMIC LAYER EPITAXY | 15 |
THE MECHANISMS AND KINETICS OF SURFACE REACTIONS | 25 |
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Common terms and phrases
1991 Materials Research adsorbed adsorption annealing Appl arsine As-rich Atomic Layer Epitaxy bond carbon CdTe chamber choked flow concentration coverage crystal growth crystalline cycle decomposition deposition desorb desorption diffraction digital etching dimers dopant doping electron energy etch rate experimental Figure flow rate flux formation Ga-rich GaAs GaAs:Zn gallium grown growth rate growth temperature hydrogen in-situ increase irradiation kinetics LALE laser lattice constant Lett Materials Research Society measured mechanism methyl radicals Mo films MOCVD molecular beam epitaxy molecules monolayer observed obtained optical oxide oxide desorption oxygen peak Phys pressure Proc pulse reactor RHEED RHEED intensity RHEED pattern sample saturation self-limiting semiconductors shown in Fig shows silicon species spectra spectroscopy sticking coefficient structure studies substrate substrate temperature superlattice surface reactions susceptor Symp technique TEGa thermal thickness thin films TMGa exposure Torr trimethylgallium vapor wafer X-ray ZnSe