Electronic Processes in Non-crystalline Materials |
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Electronic Processes in Non-Crystalline Materials Nevill Francis Mott,Edward A Davis Limited preview - 2012 |
Electronic Processes in Non-Crystalline Materials Nevill Francis Mott,Edward A Davis Limited preview - 2012 |
Common terms and phrases
absorption activation energy alloys amorphous Anderson annealing arsenic atoms band behaviour bonds calculated carriers centres chalcogenides Chapter charged co-ordination coefficient compared concentration conduction band conductivity considered constant crystal crystalline curve defect density dependence deposited described determined discussed disorder distance edge effect electric electron et al evaporated evidence excitation expected experimental field films frequency function germanium give given glasses Hall holes hopping impurity increases lead liquid localized lower materials measurements metallic minimum metallic mobility mobility edge Mott normally observed obtained occurs optical pair peak phonons plotted polaron position possible potential prepared probably properties random range resistivity samples scattering semiconductors separation shift shown in Fig shows silicon similar solid spectra structure suggest temperature temperature dependence term theory thermopower transition trapped valence varies
References to this book
Bibliographic information
| Title | Electronic Processes in Non-crystalline Materials International series of monographs on physics, ISSN 0950-5563 |
| Authors | Sir Nevill Francis Mott, Edward Arthur Davis |
| Edition | 2, illustrated |
| Publisher | Clarendon Press, 1979 |
| Original from | the University of California |
| Digitized | Feb 26, 2008 |
| ISBN | 0198512880, 9780198512882 |
| Length | 590 pages |
| Export Citation | BiBTeX EndNote RefMan |