Gallium arsenide: proceedings of the second conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986

Front Cover
Trans Tech Publications, Oct 1, 1987 - Science - 366 pages
0 Reviews

From inside the book

What people are saying - Write a review

We haven't found any reviews in the usual places.


The preparation and analysis of active layers prepared by Si+ through SI3N4
Vanadiumdoped bulk and epitaxial GaAs studied by photoluminescence
The use of anisotropically etched gallium arsenide surfaces in optoelectronics

22 other sections not shown

Common terms and phrases

Bibliographic information