Devices for Optoelectronics
Offers coverage of optical devices utilized in communication and information processing systems, highlighting the physics of optoelectronics necessary for both hybrid and monolithic optical integrated circuits. The text aims to bridge the gap between thin-film switches and active semiconductors by analyzing lithium niobate as well as compound semiconductor devices, and includes discussion on optical transmitters, receivers and switches.
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Properties of Optoelectronic Materials
Semiconductor Image Detectors
Nonlinear Optical Switching Devices
absorption acoustic active angle applied array avalanche band band gap beam carrier cavity cell charge coefficient component concentration condition conduction confinement constant coupling defined density dependent depletion detector determined device diffusion diode direction edge effect efficiency electric field electro-optic electron energy equal equation excited exciton fabricated Figure frequency function GaAs gain given hole illustrates incident increases injected intensity laser laser diodes lattice layer length lifetime light limited liquid crystal material mode modulator molecules noise nonlinear obtained operation optical output parameter phase photodiode photon plane polarization positive possible potential produced quantum range recombination reduced reflection refractive index region relation represents resonance result semiconductor separate shown in Fig shows side signal silicon structure substrate surface switch temperature term tion transfer transition variation voltage wave waveguide wavelength