Proceedings of the 3rd International Microelectronics Conference: May 21-23, 1984, Keio Plaza Hotel, Tokyo, Japan |
Contents
MATERIALS AND COMPONENTS | 41 |
Production Processes for Thin Film Metallization | 72 |
New Thick Film Capacitor Dielectrics by S J Stein | 97 |
Copyright | |
22 other sections not shown
Common terms and phrases
adhesion alloy alumina alumina substrate aluminum applications ball bond beryllia Birox broadcasting capacitance carbon ceramic characteristics chip carriers components composition conductor conventional copper film copper layer cost cycles density developed devices dielectric constant dissipation factor EDLC effect electrical resistivity electronic epoxy experimental Figure film resistor fired frequency furnace glass gold heat hole humidity hybrid circuits hybrid ICs IMC 1984 Proceedings IMST substrate increase insulation resistance Japan laser trimming lines manufacturing materials measured metal microelectronics MMC substrate module multilayer obtained oxide package parameters particles paste pattern Pd/Ag performance phase plate polyimide printed Proc production properties reduced reliability resin resistor samples satellite semiconductor sensor sheet resistivity shown in Fig shows silicon sintering solder stability structure surface Table temperature thermal resistance thick film capacitors through-hole Tokyo unit cells varistors voltage wire bond