Silicon RF Power MOSFETS

Front Cover
World Scientific, 2005 - Technology & Engineering - 302 pages
"The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved
 

What people are saying - Write a review

We haven't found any reviews in the usual places.

Contents

Chapter 1 Introduction
1
Chapter 2 RF Power Amplifiers
11
Chapter 3 MOSFET PHYSICS
33
Chapter 4 LateralDiffused MOSFETs
71
Chapter 5 VerticalDiffused MOSFETs
103
Chapter 6 ChargeCoupled MOSFETs
127
Chapter 7 SuperLinear MOSFETs
161
Chapter 8 Planar SuperLinear MOSFETs
193
Chapter 9 Dual Trench MOSFETs
219
Chapter 10 Hot Carrier Injection Instability
243
Chapter 11 Synopsis
275
Appendix
289
Index
295
Copyright

Other editions - View all

Common terms and phrases

Bibliographic information