Silicon RF Power MOSFETS"The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved |
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Contents
Chapter 1 Introduction | 1 |
Chapter 2 RF Power Amplifiers | 11 |
Chapter 3 MOSFET PHYSICS | 33 |
Chapter 4 LateralDiffused MOSFETs | 71 |
Chapter 5 VerticalDiffused MOSFETs | 103 |
Chapter 6 ChargeCoupled MOSFETs | 127 |
Chapter 7 SuperLinear MOSFETs | 161 |
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Common terms and phrases
30 volts base station bias of 30 bias voltages breakdown voltage CC-MOSFET cell pitch cell width cellular channel length chapter charge-coupling cmº compression current current gain depletion device cell Distance microns doping concentration doping profile Drain Bias Volts drain voltage drift region drift velocity DT-MOSFET electric field distribution epitaxial layer Faraday shield feed-forward flip-chip Frequency GHz Gate Bias Volts gate edge gate electrode gate oxide thickness gate voltage impact ionization input capacitance inversion layer JFET LD-MOSFET linear load-line mesa region MOSFET structure obtained on-resistance output capacitance output characteristics P-base region planar SL-MOSFET structure power gain power MOSFETs Power Semiconductor Devices quiescent drain reverse transfer capacitance RF output power RF performance RF power amplifiers shown in Fig silicon SLMOS3 ſº source electrode source region structure with LDD-dose Structure with Thinner substrate super-linear MOSFET Thinner Gate Oxide threshold voltage transconductance transfer characteristics transition region two-dimensional numerical simulations Vºs
Bibliographic information
| Title | Silicon RF Power MOSFETS Wiley Interscience publication |
| Author | B. Jayant Baliga |
| Edition | illustrated |
| Publisher | World Scientific, 2005 |
| ISBN | 9812561218, 9789812561213 |
| Length | 302 pages |
| Subjects | › › Science / Physics / Electricity Technology & Engineering / Electrical Technology & Engineering / Radio Technology & Engineering / Telecommunications |
| Export Citation | BiBTeX EndNote RefMan |