A Study of Current Crowding in Bipolar Transistors |
Common terms and phrases
approximate solution assumed base contact base current breakdown Base voltage distribution base-emitter boundary conditions breakdown voltage BV cbo c₂ charging current density collector current collector multiplication common emitter conduction current density constant crowding studies current crowding current distribution depletion region depletion region capacitances di/dx different values differential equation diffused collector diffusion capacitance diffusion equation diode distribution for different effective emitter length emitter base junction emitter crowding emitter junction emitter resistance equivalent circuit etch Ghosh Hence high current increase initial condition integration minority carrier numerical integration onset of thermal open base breakdown p-n-p transistor plot qIbLb qVb/kT reduces reverse base current saturation current Schottky collectors second period shown in Fig silicon groove single point collocation steady state value subdivided collector subdomains t₁ temperature terminal base current thermal instability transient Transistor geometry V₁ V₁(t V₂ yields zero кт сс