## A Study of Current Crowding in Bipolar Transistors |

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### Contents

2d Metallization mask | 89 |

3d Collector Diffusion | 92 |

Appendix A A Discussion of the Assumptions in the Study | 111 |

3 other sections not shown

### Common terms and phrases

adjustable parameters approximate solution base contact base current breakdown base width BIPOLAR TRANSISTORS boundary conditions breakdown voltage cc BV cbo CC CC collector current collector Fig collector-base common emitter conduction current density Cross section crowding studies current crowding current distribution current gain d.c. crowding depletion region capacitances different values differential equation diffused collector diffusion capacitance diffusion equation diode diode characteristics distributed collector resistance effective emitter length emitter base junction emitter crowding emitter current density epitaxial equivalent circuit etch exact solution fabricated Ghosh Hence high current increase initial condition lateral base current minority carriers n-p-n transistor nonlinear obtained onset of thermal open base breakdown oxidation p-n-p transistor plot qV kT reverse base current saturation current second breakdown shown in Fig silicon groove single point collocation subdivided collector subdomains substrate temperature terminal base current thermal effects thermal instability transient transistor parameters unisolated device weighting functions xQ(t yields zero