LEOS 1991: Summer Topical Meetings on Epitaxial Materials and In-situ Processing for Optoelectronic Devices, July 29-31, 1991 and Microfabrication for Photonics and Optoelectronics, July 31-August 2,1991 |
Contents
EPITAXIAL OVERVIEW | 3 |
WEDNESDAY JULY 31 | 6 |
Future Prospects of Beam Epitaxies for Optoelectronics | 9 |
Copyright | |
15 other sections not shown
Common terms and phrases
active layer AlGaAs Appl applications arrays AT&T Bell band gap barriers Bragg cavity Center chemical Chemical Beam Epitaxy cladding layer damage diffraction diode lasers doping dry etching Electrical electron beam epilayer etch depth etch rate fabrication Fermi level Figure film GaAs GaAs substrate GaAs:As GaAs/AlGaAs grating grown growth rate growth technique growth temperature HCl etch heterostructure IEEE III-V implantation in-situ InGaAs InGaAsP integrated ion beam Laboratories laser diodes laser structure layer thickness linewidth lithography mask material measured microlens mirror MOCVD modulation molecular beam epitaxy monolithic MOVPE obtained optical optoelectronic optoelectronic devices output power oxide pattern peak photoluminescence photonic photoresist Phys plasma quantum efficiency quantum wires QW's ratio reflectivity region regrowth Research RHEED RIBE sample semiconductor lasers shown in Fig shows sidewall SiO2 strain strained-layer Technology threshold current density undoped vacancies vertical W. T. Tsang wafer waveguide wavelength width ZnSe