## Computational Single-ElectronicsSingle-electronics is a fascinating technology which reveals new physical effects of charge transport. It has many benefits and great figure of merits but also several open challenges waiting for elegant solutions . In my almost o- decade-long involvement in single-electronics I have seen a steady rise in interest measurable in the number of published articles, conference talks, and research grants from government and industry . In order to collect , categorize, and summarize a good part of this body of knowledge as well as to introduce some new points of view, variations , and extensions, I set out to write this book. A book targeted at the student eager to delve into single-electronics as well as the expert who needs a reference for theory, circuits, and algorithms for system analyses. This book addresses three areas : the theory which goes beyond the orthodox theory, the computational methods necessary to analyze sing- electron circuits, and applications and manufacturing methods, the practical side of single-electronics. The theory was kept short and concise, suitable for people seeking a compact introduction or reference . For in-depth coverage one has to consult cited articles and books. The computational part is very complete and can be considered state of the art for single-electronics . Almost all algorithms which are necessary for a successful and efficient implemen- tion are stated . Not all of them are exhaustively explained but at least a recipe for their successful implementation is given . |

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awesome..................book for people who work on SET devices.

### Contents

I | 1 |

II | 5 |

III | 9 |

V | 12 |

VI | 18 |

VII | 19 |

VIII | 22 |

X | 25 |

LXX | 143 |

LXXI | 147 |

LXXIV | 155 |

LXXV | 156 |

LXXVI | 157 |

LXXVII | 158 |

LXXVIII | 161 |

LXXX | 162 |

XII | 27 |

XIII | 31 |

XIV | 32 |

XV | 33 |

XVI | 34 |

XIX | 35 |

XX | 37 |

XXI | 42 |

XXII | 48 |

XXIV | 55 |

XXV | 58 |

XXVII | 60 |

XXVIII | 62 |

XXIX | 64 |

XXX | 66 |

XXXI | 67 |

XXXII | 70 |

XXXIII | 73 |

XXXIV | 77 |

XXXV | 79 |

XXXVI | 85 |

XXXVII | 87 |

XXXVIII | 89 |

XXXIX | 90 |

XL | 91 |

XLI | 92 |

XLII | 94 |

XLIII | 99 |

XLIV | 101 |

XLV | 105 |

XLVI | 106 |

XLVII | 107 |

XLVIII | 109 |

XLIX | 110 |

LI | 111 |

LII | 112 |

LIV | 113 |

LV | 115 |

LVI | 116 |

LVII | 117 |

LVIII | 121 |

LX | 122 |

LXI | 123 |

LXII | 126 |

LXIII | 127 |

LXIV | 129 |

LXV | 132 |

LXVI | 133 |

LXVII | 135 |

LXVIII | 137 |

LXIX | 139 |

LXXXI | 163 |

LXXXII | 164 |

LXXXIII | 166 |

LXXXV | 167 |

LXXXVI | 168 |

LXXXVII | 169 |

LXXXVIII | 172 |

XC | 174 |

XCI | 175 |

XCII | 177 |

XCIII | 178 |

XCIV | 180 |

XCVII | 182 |

XCVIII | 183 |

XCIX | 184 |

C | 186 |

CI | 187 |

CII | 190 |

CIII | 191 |

CV | 195 |

CVI | 196 |

CVII | 201 |

CVIII | 202 |

CX | 203 |

CXI | 206 |

CXII | 208 |

CXIV | 211 |

CXV | 212 |

CXVI | 213 |

CXVII | 217 |

CXVIII | 218 |

CXIX | 219 |

CXX | 220 |

CXXII | 222 |

CXXIV | 223 |

CXXV | 225 |

CXXVI | 226 |

CXXVII | 227 |

CXXVIII | 228 |

CXXIX | 230 |

CXXX | 231 |

CXXXII | 232 |

CXXXIII | 233 |

CXXXV | 235 |

CXXXVI | 237 |

CXXXVII | 238 |

CXXXVIII | 246 |

CXXXIX | 248 |

257 | |

275 | |

### Other editions - View all

### Common terms and phrases

achieve algorithm analytic approximation asymmetric bias voltage boundary conditions calculate capacitor change in free collocation points constant Cooper pair cotunneling Coulomb blockade density dielectric differential dipole discrete electric field electron tunneling electrostatic energy elementary charge energy levels evaluate exponential Fermi free energy gate voltage image charge input integral inversion inversive congruential island lagged Fibonacci logic macronode master equation matrix exponential memory cell metal Monte Carlo method MOSFET neuron node charges node voltages normal resistors number of electrons operation orthodox theory oscillations output point charge polarization polynomial possible potential barrier pump quantum dot quasiparticle random background charge random numbers Schrodinger equation Sect semiconductor shown in Fig simulation single-electron circuits single-electron devices single-electron transistor solution solve sphere stability diagram stability plot stochastic superconducting surface switch thermal transmission coefficient tunnel barrier tunnel event tunnel junction tunnel rate tunnel resistance tunneling electron turnstile two-dimensional voltage sources wavefunction

### Popular passages

Page 270 - VI Talyanskii, JM Shilton, M. Pepper, CG Smith, CJB Ford, EH Linfield, DA Ritchie, and GAC Jones, "Single-electron transport in a one-dimensional channel by high-frequency surface acoustic waves,

Page 258 - H. Grabert and MH Devoret, eds., Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, Plenum Press, New York, 1992.

Page 270 - N. Takahashi, H. Ishikuro, and T. Hiramoto, "A Directional Current Switch Using Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots,

Page 267 - T. Futatsugi, K. Kosemura, T. Fukano and N. Yokoyama, "Room temperature operation of Si single-electron memory with self-aligned floating dot gate,

Page 269 - Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals", J. Appl. Phys., 84.

Page 270 - GL Snider. AO Orlov, I. Amlani. GH Bernstein, CS Lent, JL Merz, and W. Porod, Experimental demonstration of quantum-dot cellular automata.

Page 263 - L. Guo, E. Leobandung, and SY Chou, A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultra narrow channel,^/.

### References to this book

Proceedings of the Asia Pacific Nanotechnology Forum 2003: OZ NANO 03 ... Jurgen Schulte Limited preview - 2004 |