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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals", J. Appl. Phys., 84.

Computational Single-Electronics - Page 269
by Christoph Wasshuber - 2001 - 280 pages
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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and ...

D. J. Dumin - Technology & Engineering - 2002 - 292 pages

...Oxygen/Nitrogen Content", IEEE Electron Dev. Lett. 19, 207, 1998. 312. Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto, "Effects of Traps on Charge Storage Characteristics...Structures Based on Silicon Nanocrystals", J. Appl. Phys. 84, 2358, 1998. 313. S.-H. Choi and RG Elliman, "Reversible Charging Effects in SiO2 Films Containing...

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