## Elementary Electronic StructureThis is a revised edition of the 1999 text on the electronic structure and properties of solids, similar in spirit to the well-known 1980 text Electronic Structure and the Properties of Solids. The revisions include an added chapter on glasses, and rewritten sections on spin-orbit coupling, magnetic alloys, and actinides. The text covers covalent semiconductors, ionic insulators, simple metals, and transition-metal and f-shell-metal systems. It focuses on the most important aspects of each system, making what approximations are necessary in order to proceed analytically and obtain formulae for the properties. Such back-of-the-envelope formulae, which display the dependence of any property on the parameters of the system, are characteristic of Harrison's approach to electronic structure, as is his simple presentation and his provision of all the needed parameters.In spite of the diversity of systems and materials, the approach is systematic and coherent, combining the tight-binding (or atomic) picture with the pseudopotential (or free-electron) picture. This provides parameters ? the empty-core radii as well as the covalent energies ? and conceptual bases for estimating the various properties of all these systems. Extensive tables of parameters and properties are included.The book has been written as a text, with problems at the end of each chapter, and others can readily be generated by asking for estimates of different properties, or different materials, than those treated in the text. In fact, the ease of generating interesting problems reflects the extraordinary utility and simplicity of the methods introduced. Developments since the 1980 publication have made the theory simpler and much more accurate, besides allowing much wider application. |

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### Contents

The Basic Approach | 1 |

Bonding in Tetrahedral Semiconductors | 53 |

Elastic Properties of Semiconductors | 107 |

The Dielectric Properties of Semiconductors | 142 |

Semiconductor Energy Bands | 179 |

Electronic Properties | 214 |

Effects of Lattice Distortions | 254 |

Impurities and Defects | 293 |

Simple Metals Electronic Structure | 434 |

Simple Metals Bonding Properties | 483 |

Transition Metals | 530 |

fShell Metals | 593 |

TransitionMetal AB Compounds | 641 |

Other Transition and fShell Compounds | 679 |

Surfaces and Interfaces | 714 |

Other Systems | 752 |

Bonding In Ionic Crystals | 324 |

Elastic Properties of Ionic Crystals | 353 |

Dielectric Properties of Ionic Solids | 379 |

Covalent Insulators SiO2 | 399 |

Glasses | 787 |

Author Index | 807 |

827 | |

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### Common terms and phrases

added additional antibonding applied appropriate approximation arising atom average bands becomes bond calculation called Chapter charge cohesion combination compared compounds constant contribution correct corresponding Coulomb coupling covalent crystal density dependence described dielectric direction discussed displacement distortion effects electronic structure electrons energy enters equal equilibrium estimate evaluated expect experiment experimental fact factor Fermi field force four free-electron function given gives Harrison hybrids important included increase indicated interaction interesting lattice leading levels listed lower matrix elements metals modes negative neighbors noted obtain occupied orbitals overlap oxygen p-states parameters Phys plane polar positive potential predicted Problem properties pseudopotential repulsion result semiconductors shift shown silicon simple solid solution spacing structure surface symmetry Table tetrahedral theory tight-binding total energy transfer transition treated unit valence values volume wavenumber zero