Elementary Electronic StructureThis is a revised edition of the 1999 text on the electronic structure and properties of solids, similar in spirit to the well-known 1980 text Electronic Structure and the Properties of Solids. The revisions include an added chapter on glasses, and rewritten sections on spin-orbit coupling, magnetic alloys, and actinides. The text covers covalent semiconductors, ionic insulators, simple metals, and transition-metal and f-shell-metal systems. It focuses on the most important aspects of each system, making what approximations are necessary in order to proceed analytically and obtain formulae for the properties. Such back-of-the-envelope formulae, which display the dependence of any property on the parameters of the system, are characteristic of Harrison's approach to electronic structure, as is his simple presentation and his provision of all the needed parameters.In spite of the diversity of systems and materials, the approach is systematic and coherent, combining the tight-binding (or atomic) picture with the pseudopotential (or free-electron) picture. This provides parameters ? the empty-core radii as well as the covalent energies ? and conceptual bases for estimating the various properties of all these systems. Extensive tables of parameters and properties are included.The book has been written as a text, with problems at the end of each chapter, and others can readily be generated by asking for estimates of different properties, or different materials, than those treated in the text. In fact, the ease of generating interesting problems reflects the extraordinary utility and simplicity of the methods introduced. Developments since the 1980 publication have made the theory simpler and much more accurate, besides allowing much wider application. |
Contents
The Basic Approach | 1 |
B Other Systems | 51 |
E The Overlap Repulsion Vod | 65 |
B Metallization | 75 |
Polar Systems | 81 |
Structural Stability and Moments | 93 |
Elastic Properties of Semiconductors | 107 |
The Dielectric Properties of Semiconductors | 142 |
61 | 453 |
ElectronPhonon Interaction | 476 |
Simple Metals Bonding Properties | 483 |
69 | 517 |
101 | 524 |
Transition Metals | 530 |
G Crystal Structure Determination | 576 |
fShell Metals | 593 |
Semiconductor Energy Bands | 179 |
Electronic Properties | 214 |
Effects of Lattice Distortions | 254 |
Impurities and Defects | 293 |
Bonding In Ionic Crystals | 324 |
Elastic Properties of Ionic Crystals | 353 |
Dielectric Properties of Ionic Solids | 379 |
78 | 391 |
Covalent Insulators SiO2 | 399 |
82 | 418 |
Simple Metals Electronic Structure | 434 |
84 | 438 |
TransitionMetal AB Compounds | 641 |
Other Transition and fShell Compounds | 679 |
Surfaces and Interfaces | 714 |
Other Systems | 752 |
Glasses | 787 |
103 | 797 |
Author Index | 807 |
107 | 809 |
| 819 | |
| 827 | |
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Common terms and phrases
additional antibonding applied appropriate approximation arising atom average bands becomes bond calculation called Chapter charge coefficients cohesion combination compared compounds conduction constant contribution correct corresponding Coulomb coupling crystal density dependence described dielectric direction discussed displacement distortion effects electronic structure electrons energy enters equal estimate evaluated expect experiment experimental fact factor Fermi field force four frequency function given gives Harrison hybrids important included increase indicated interaction lattice leading levels listed lower mass matrix elements metals modes negative neighbors noted obtain occupied optical orbitals overlap oxygen p-states parameters Phys plane polar positive potential predicted Problem properties pseudopotential reduced repulsion result seen semiconductors shift shown silicon simple solid solution spacing structure surface symmetry Table tetrahedral theory tight-binding transfer transition treated unit valence values volume wavenumber zero