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The Influence of Oxidation Temperature and Gate Metal on the Elec 6095 Ghader EFTEKHARI
Carbon and Indium Codoping in GaAs for Reliable AlGaAsGaAs 6129 Takumi NITTONO Noriyuki WATANABE Hiroshi
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absorption accepted for publication activation energy angle annealing anodization Appl atoms band gap beam calculated capacitance carrier cell chemical chemical vapor deposition Co-APPD contact angle crystal curve decreases defect density dependence device dielectric constant diffraction diffusion doped effect electric electron energy epilayers epitaxial etching EXAFS exciton experimental ferroelectric Figure flow rate function GaAs grown growth GSMBE h-GaN HF concentration Hiroshi HVPE hydrogen increase InGaAs intensity interface laser lattice lattice constant layer Lett magnetic mask measured microwave neutron observed obtained optical oxide oxygen parameters patterns peak phase Phys plasma polymer pore protons proximity gap PSLs region resist resonant sample scattering shown in Fig shows silicon solid spectra spectrum sputtering structure substrate superconducting superlattices surface Takashi temperature thermal thickness thin films tion Torr ture valence band vapor voltage wafer wavelength width X-ray X-ray diffraction XANES YBCO