What people are saying - Write a review
We haven't found any reviews in the usual places.
Changing the Nature of Change in Semiconductor Technology
Vertical Bloch Line Storage Technology
A ThinFilm Ferroelectric Space Experiment
2 other sections not shown
achieved additional allows applications architecture array block bubble byte capacitor characteristics charge chip circuit CMOS compared cycles decrease density developed device disk dose double drive EEPROM effect electric Electronics endurance environment erase failures ferroelectric field Figure File System film flash devices flash memory floating gate function gate ground hard improved increase initial input interface internal layer limitations logic magnetic magnetic disk material measurements memory cell metal micron mode nitride nonvolatile memory operation output oxide performed polarization poly present programming radiation reduced reliability retention sector Semiconductor sense line shown shows signal silicon single SLIC SONOS space speed storage stored stripe structure supply switch temperature thickness threshold voltage Touch transfer transistor trap tunnel oxide typically voltage write