Summaries of Papers Presented at the Semiconductor Lasers Topical MeetingOptical Society of America, 1987 - Injection lasers |
Contents
WA ARRAYS SURFACE EMITTERS AND RELATED present some recent results on CBH GalnAsPInP | 8 |
TuB NOISE LINEWIDTH AND STABILITY 5 | 23 |
TuD4 WideBandwidth HighPower 1 3μm InGaAsP System measurements have demonstrated that the device | 25 |
Copyright | |
8 other sections not shown
Common terms and phrases
achieved active layer angle Appl beam bias blocking buried Burnham calculated carrier cavity cavity length Center channel characteristics confinement coupling demonstrated dependence device difference diode lasers distribution effects efficiency Electron emission emitting etched external cavity fabricated facet far-field field Figure formed frequency function GaAs gain gain-guided geometry grating grown growth heat heterostructure high power higher IEEE improved increase InGaAsP injection intensity Laboratories laser array laser diode lasing lateral Lett lifetime light linewidth lobe loss maximum measured mirror mode narrow observed obtained operation optical optical feedback output power pattern performance phase Phys present quantum radiation range reduced References reflectivity region reported Research resonance semiconductor lasers shown in Figure shows single stable stripe structure substrate surface technique temperature thermal thickness threshold current tuning typically wafer waveguide wavelength width