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TuD4 WideBandwidth HighPower 1 3pm InGaAsP System measurements have demonstrated that the device
Current Blocking Layers C E Zah J S Osinski S G years at 50 C have been predicted from over 300000
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active layer active layer thickness active region Appl beam blocking layers buried heterostructure carrier lifetime cavity length chemical vapor deposition chirped array coupling D. R. Scifres device dielectric differential quantum efficiency diffraction diode laser arrays diode lasers effects eigenmodes Electron Lett epitaxy etched external cavity fabricated Fabry-Perot facet reflectivity far-field patterns feedback field pattern frequency GaAs gain gain-guided arrays geometry graded barrier quantum heat sink heterostructure high power Holonyak N Jr IEEE increase index-guided InGaAsP junction heating Laboratories laser diode laser structure lasing lateral mode linewidth lobe longitudinal mode measured mesa mirror MOCVD near-field optical optical feedback output power phase Phys planar Quantum Electron R. D. Burnham radiation pattern reflector resonance self-pulsing semi-insulating semiconductor lasers shown in Figure shows shunt current spontaneous emission Streifer submount substrate supermode threshold current density wafer waveguide wavelength width